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1 110322100001 110322.100001.運算放大器 110322.100001.Operational Amplifier 1100.110322.100001.運算放大器.Operational Amplifier.オペアンプ -> 192 110322
2 110322100010 110322.100010.理想運算放大器OPAMP簡介 110322.100010.Introduction to Ideal Operational Amplifiers OP AMP 1100.110322.100010.理想運算放大器OPAMP簡介.Introduction to Ideal Operational Amplifiers OP AMP.理想的なオペアンプOPAMP 110322
3 110322100020 110322.100020.反相組態與非反相組態放大器 110322.100020.Inverting and non-inverting configuration amplifiers 1100.110322.100020.反相組態與非反相組態放大器.Inverting and non-inverting configuration amplifiers.反転構成および非反転構成アン 110322
4 110322100030 110322.100030.運算放大器特性與參數 110322.100030.Operational amplifier characteristics and parameters 1100.110322.100030.運算放大器特性與參數.Operational amplifier characteristics and parameters.オペアンプの特性とパラメータ -> 110322
5 110322100040 110322.100040.加法器 110322.100040.Adder 1100.110322.100040.加法器.Adder.加算器 -> 282 110322
6 110322100050 110322.100050.比較器 110322.100050.Comparators 1100.110322.100050.比較器.Comparators.コンパレータ -> 290 110322
7 110322110001 110322.110001.基本振盪電路應用 110322.110001.Basic Oscillation Circuit Application 1100.110322.110001.基本振盪電路應用.Basic Oscillation Circuit Application.基本的な發振回路アプリケーション -> 290 110322
8 110322110010 110322.110010.施密特觸發器SchmittTrigger 110322.110010.Schmitt Trigger 1100.110322.110010.施密特觸發器SchmittTrigger.Schmitt Trigger.シュミットトリガーシュミットトリガー -> 270 110322
9 110322110020 110322.110020.方波產生器 110322.110020.Square wave generator 1100.110322.110020.方波產生器.Square wave generator.方形波發生器 -> 290 110322
10 110323 電子學運用 Electronics Useage 110323.電子學運用.Electronics Useage -> 1530 1100
11 110323030001 110323.030001.電子器件和電路 110323.030001.Electronics and circuits 1100.110323.030001.電子器件和電路.Electronics and circuits.電子機器と回路 -> 191 110323
12 110323040001 110323.040001.模擬電路和數字電路 110323.040001.Analog and digital circuits 1100.110323.040001.模擬電路和數字電路.Analog and digital circuits.アナログ回路とデジタル回路 -> 194 110323
13 110323050001 110323.050001.控制系統 110323.050001.Control System 1100.110323.050001.控制系統.Control System.制御システム -> 195 110323
14 110323060001 110323.060001.電子學運用-通信 110323.060001.Communication 1100.110323.060001.電子學運用-通信.Communication.エレクトロニクスアプリケーション-通信 -> 197 110323
15 110323070001 110323.070001.電子學運用-通信工程 110323.070001.Communication Engineering 1100.110323.070001.電子學運用-通信工程.Communication Engineering.エレクトロニクスアプリケーション-通信工学 -> 191 110323
16 110323080001 110323.080001.信號處理 110323.080001.Signal processing 1100.110323.080001.信號處理.Signal processing.信号処理 -> 185 110323
17 110323090001 110323.090001.信號與系統 110323.090001.Signals and Systems 1100.110323.090001.信號與系統.Signals and Systems.信号とシステム -> 186 110323
18 110323100001 110323.100001.計算機工程 110323.100001.computer engineering 1100.110323.100001.計算機工程.computer engineering.コンピューターエンジニア -> 191 110323
19 110324 電子束物理沉積EBPVD方法 Electron_Beam_Physical_Vapor_Deposition_EB_PVD_Method 110324.電子束物理沉積EBPVD方法.Electron_Beam_Physical_Vapor_Deposition_EB_PVD_Method -> 42087 1100
20 110324001001 110324.001001.電子束物理沉積EBPVD方法 110324.001001.Electron Beam Physical Vapor Deposition EB PVD Method 1100.110324.001001.電子束物理沉積EBPVD方法.Electron Beam Physical Vapor Deposition EB PVD Method.電子ビーム物理蒸着EBP 110324
21 110324001010 110324.001010.電子束蒸鍍原理 110324.001010.Principle of electron beam evaporation 1100.110324.001010.電子束蒸鍍原理.Principle of electron beam evaporation.電子ビーム蒸發の原理 -> 451 110324
22 110324001020 110324.001020.電子束蒸鍍機原理 110324.001020.Principle of electron beam evaporation machine 1100.110324.001020.電子束蒸鍍機原理.Principle of electron beam evaporation machine.電子ビーム蒸着機の原理 -> 615 110324
23 110324001030 110324.001030.電子束蒸鍍缺點 110324.001030.Disadvantages of electron beam evaporation 1100.110324.001030.電子束蒸鍍缺點.Disadvantages of electron beam evaporation.電子ビーム蒸發のデメリット -> 453 110324
24 110324001040 110324.001040.e-gun原理 110324.001040.e-gun principle 1100.110324.001040.e-gun原理.e-gun principle.e-gunの原理 -> 569 110324
25 110324001050 110324.001050.e-gunevaporation 110324.001050.e-gun evaporation 1100.110324.001050.e-gunevaporation.e-gun evaporation.e-gun蒸發 -> 472 110324
26 110324001060 110324.001060.EBeam原理 110324.001060.E Beam principle 1100.110324.001060.EBeam原理.E Beam principle.Eビーム原理 -> 480 110324
27 110324001070 110324.001070.蒸鍍機操作 110324.001070.Evaporator operation 1100.110324.001070.蒸鍍機操作.Evaporator operation.蒸發器の操作 -> 290 110324
28 110324001080 110324.001080.電子束物理沉積EBPVD方法-蒸鍍濺鍍比較 110324.001080.Evaporation sputtering comparison 1100.110324.001080.電子束物理沉積EBPVD方法-蒸鍍濺鍍比較.Evaporation sputtering comparison.蒸着スパッタリングの比較 -> 71 110324
29 110324001090 110324.001090.電子束物理沉積EBPVD方法-蒸鍍濺鍍優缺點 110324.001090.Advantages and disadvantages of sputtering 1100.110324.001090.電子束物理沉積EBPVD方法-蒸鍍濺鍍優缺點.Advantages and disadvantages of sputtering.スパッタリングの長所と短所 - 110324
30 110324010001 110324.010001.氣相沉積設備 110324.010001.Thin film deposition equipment 1100.110324.010001.氣相沉積設備.Thin film deposition equipment.蒸着装置 -> 2896 110324
31 110324010010 110324.010010.化學氣相沉積 110324.010010.Chemical vapor deposition 1100.110324.010010.化學氣相沉積.Chemical vapor deposition.化学蒸着 -> 3042 110324
32 110324010020 110324.010020.物理氣相沉積 110324.010020.Physical vapor deposition 1100.110324.010020.物理氣相沉積.Physical vapor deposition.物理的な蒸気堆積 -> 419 110324
33 110324010030 110324.010030.電漿化學氣相沉積 110324.010030.Plasma chemical vapor deposition 1100.110324.010030.電漿化學氣相沉積.Plasma chemical vapor deposition.プラズマ化学蒸気堆積 -> 2553 110324
34 110324010040 110324.010040.電子束物理沉積EBPVD方法-氣相反應 110324.010040.Gas phase reaction 1100.110324.010040.電子束物理沉積EBPVD方法-氣相反應.Gas phase reaction.気相反応 -> 554 110324
35 110324010050 110324.010050.CVD設備 110324.010050.CVD equipment 1100.110324.010050.CVD設備.CVD equipment.CVD装置 -> 461 110324
36 110324010060 110324.010060.pecvd原理 110324.010060.pecvd principle 1100.110324.010060.pecvd原理.pecvd principle.pecvdの原則 -> 277 110324
37 110324010070 110324.010070.SAMCOPECVD 110324.010070.SAMCO PECVD 1100.110324.010070.SAMCOPECVD.SAMCO PECVD.SAMCOPECVD -> 186 110324
38 110324010080 110324.010080.pecvd機台 110324.010080.pecvd machine 1100.110324.010080.pecvd機台.pecvd machine.pecvdマシン -> 552 110324
39 110324010090 110324.010090.物理氣相沉積化學氣相沉積比較 110324.010090.Comparison of physical vapor deposition and chemical vapor deposition 1100.110324.010090.物理氣相沉積化學氣相沉積比較.Comparison of physical vapor deposition and chemical vapor deposit 110324
40 110324010100 110324.010100.cvdpvd比較 110324.010100.cvd pvd comparison 1100.110324.010100.cvdpvd比較.cvd pvd comparison.cvdpvd比較 -> 481 110324
41 110324020001 110324.020001.真空蒸鍍 110324.020001.Vacuum Vapor Deposition / Vacuum Deposition Plating 1100.110324.020001.真空蒸鍍.Vacuum Vapor Deposition / Vacuum Deposition Plating.真空蒸着/真空蒸着メッキ -> 1722 110324
42 110324020010 110324.020010.蒸機操作 110324.020010.Steamer operation 1100.110324.020010.蒸機操作.Steamer operation.蒸鍍機操作 -> 513 110324
43 110324020020 110324.020020.真空鍍膜設備 110324.020020.Vacuum coating equipment 1100.110324.020020.真空鍍膜設備.Vacuum coating equipment.Vacuumcoatingequipment  -> 554 110324
44 110324020030 110324.020030.高溫真空烘烤裝置 110324.020030.High temperature vacuum baking device 1100.110324.020030.高溫真空烘烤裝置.High temperature vacuum baking device.高温真空ベーキング装置  -> 483 110324
45 110324020040 110324.020040.高真空氣相沉積設備 110324.020040.High vacuum vapor deposition equipment 1100.110324.020040.高真空氣相沉積設備.High vacuum vapor deposition equipment.高真空蒸着装置 -> 668 110324
46 110324020050 110324.020050.MPVAP高性能真空氣相沉積設備- 110324.020050.MPVAP high-performance vacuum vapor deposition equipment- 1100.110324.020050.MPVAP高性能真空氣相沉積設備-.MPVAP high-performance vacuum vapor deposition equipment-.MPVAP 110324
47 110324020051 110324.020051.MPVAP-粉末金屬粉末沉積設備- 110324.020051.MPVAP-Powder metal powder deposition equipment- 1100.110324.020051.MPVAP-粉末金屬粉末沉積設備-.MPVAP-Powder metal powder deposition equipment-.MPVAP-粉末金属粉末堆積装 110324
48 110324020060 110324.020060.普通會員名單-一般社團法人日本真空工業協會 110324.020060.List of ordinary members-Japan Vacuum Industry Association 1100.110324.020060.普通會員名單-一般社團法人日本真空工業協會.List of ordinary members-Japan Vacuum Industry Association. 110324
49 110324020070 110324.020070.氣相沉積設備和真空設備 110324.020070.Vapor deposition equipment and vacuum equipment 1100.110324.020070.氣相沉積設備和真空設備.Vapor deposition equipment and vacuum equipment.蒸着装置&バキューム装置 -> 554 110324
50 110324020080 110324.020080.濺射真空沉積電子束和電子顯微鏡的原理和機理 110324.020080.The principle and mechanism of sputtering vacuum deposition electron beam and electron 1100.110324.020080.濺射真空沉積電子束和電子顯微鏡的原理和機理.The principle and mechanism of sputtering vacuum deposition 110324
51 110324020090 110324.020090.3.關於真空的基礎知識 110324.020090.3. Basic knowledge about vacuum 1100.110324.020090.3.關於真空的基礎知識.3. Basic knowledge about vacuum.3.真空についての基礎 -> 656 110324
52 110324020100 110324.020100.ATV設備 110324.020100.ATV equipment 1100.110324.020100.ATV設備.ATV equipment.ATV装置 -> 326 110324
53 110324020110 110324.020110.下一代蓄電池的新製造工藝浮動IJ法真空沉積法 110324.020110.The new manufacturing process of next-generation batteries floating IJ method vacuum d 1100.110324.020110.下一代蓄電池的新製造工藝浮動IJ法真空沉積法.The new manufacturing process of next-generation batteries 110324
54 110324020120 110324.020120.其他塗裝設備/表面處理設備產品/服務 110324.020120.Other coating equipment/surface treatment equipment products/services 1100.110324.020120.其他塗裝設備/表面處理設備產品/服務.Other coating equipment/surface treatment equipment products/s 110324
55 110324020130 110324.020130.真空蒸鍍/真空蒸鍍 110324.020130.Vacuum evaporation/vacuum evaporation 1100.110324.020130.真空蒸鍍/真空蒸鍍.Vacuum evaporation/vacuum evaporation.真空蒸着/真空蒸着メッキ -> 576 110324
56 110324020140 110324.020140.真空氣相沉積設備 110324.020140.Vacuum Vapor Deposition Equipment 1100.110324.020140.真空氣相沉積設備.Vacuum Vapor Deposition Equipment.真空蒸着装置 -> 307 110324
57 110324030001 110324.030001.氣相沉積和濺射 110324.030001.Thin film deposition and sputtering 1100.110324.030001.氣相沉積和濺射.Thin film deposition and sputtering.蒸着とスパッタリング -> 1292 110324
58 110324030010 110324.030010.蒸鍍濺鍍比較 110324.030010.Comparison of evaporation and sputtering 1100.110324.030010.蒸鍍濺鍍比較.Comparison of evaporation and sputtering.蒸發とスパッタリングの比較 -> 471 110324
59 110324030020 110324.030020.蒸鍍濺鍍優缺點 110324.030020. Advantages and disadvantages of sputtering 1100.110324.030020.蒸鍍濺鍍優缺點. Advantages and disadvantages of sputtering._スパッタリングの長所と短所 -> 290 110324
60 110324030030 110324.030030.什麼是濺射 110324.030030.What is sputtering? 1100.110324.030030.什麼是濺射.What is sputtering?.スパッタリングとは -> 292 110324
61 110324030040 110324.030040.自製濺射裝置 110324.030040.Sputtering device self-made 1100.110324.030040.自製濺射裝置.Sputtering device self-made.スパッタリング装置自作 -> 237 110324
62 110324030050 110324.030050.濺射設備ULVAC 110324.030050.Sputtering equipment ULVAC 1100.110324.030050.濺射設備ULVAC.Sputtering equipment ULVAC.スパッタリング装置アルバック -> 246 110324
63 110324030060 110324.030060.濺射裝置英文 110324.030060.Sputtering equipment English 1100.110324.030060.濺射裝置英文.Sputtering equipment English.スパッタリング装置英語 -> 350 110324
64 110324040001 110324.040001.濺射裝置 110324.040001.Sputtering equipment 1100.110324.040001.濺射裝置.Sputtering equipment.スパッタリング装置 -> 1400 110324
65 110324040010 110324.040010.濺射設備 110324.040010.Sputtering equipment 1100.110324.040010.濺射設備.Sputtering equipment.スパッタリング蒸着装置 -> 290 110324
66 110324040020 110324.040020.濺射設備製造商 110324.040020.Sputtering equipment manufacturer 1100.110324.040020.濺射設備製造商.Sputtering equipment manufacturer.スパッタリング装置メーカー -> 292 110324
67 110324040030 110324.040030.濺射設備份額 110324.040030.Sputtering equipment share 1100.110324.040030.濺射設備份額.Sputtering equipment share.スパッタリング装置シェア -> 239 110324
68 110324040040 110324.040040.濺射裝置原理 110324.040040.Sputtering equipment principle 1100.110324.040040.濺射裝置原理.Sputtering equipment principle.スパッタリング装置原理 -> 288 110324
69 110324040050 110324.040050.濺射設備價格 110324.040050.Sputtering equipment price 1100.110324.040050.濺射設備價格.Sputtering equipment price.スパッタリング装置価格 -> 287 110324
70 110324040060 110324.040060.濺射方法 110324.040060.Sputtering method 1100.110324.040060.濺射方法.Sputtering method.スパッタリングやり方 -> 285 110324
71 110324040070 110324.040070.飛濺汽相沉積 110324.040070.Sputter vapor deposition 1100.110324.040070.飛濺汽相沉積.Sputter vapor deposition.スパッタ蒸着 -> 224 110324
72 110324050001 110324.050001.濺射式薄膜沉積設備 110324.050001.Sputtering thin film film forming equipment 1100.110324.050001.濺射式薄膜沉積設備.Sputtering thin film film forming equipment.スパッタリング式薄膜成膜装置 -> 1162 110324
73 110324050010 110324.050010.薄膜技術 110324.050010.Thin film technology 1100.110324.050010.薄膜技術.Thin film technology.薄膜技術 -> 281 110324
74 110324050020 110324.050020.PVD成膜設備 110324.050020.PVD film deposition equipment 1100.110324.050020.PVD成膜設備.PVD film deposition equipment.PVDの成膜装置 -> 290 110324
75 110324050030 110324.050030.關於真空成膜設備的機理 110324.050030.About the mechanism of the vacuum film deposition equipment 1100.110324.050030.關於真空成膜設備的機理.About the mechanism of the vacuum film deposition equipment.真空成膜装置のしく 110324
76 110324050040 110324.050040.成膜設備目錄--AlbacKiko 110324.050040.Film formation equipment catalog --ULVAC Kiko 1100.110324.050040.成膜設備目錄--AlbacKiko.Film formation equipment catalog --ULVAC Kiko.成膜装置カタログ-アルバック機工 110324
77 110324050050 110324.050050.電子槍原理 110324.050050.e-gun principle 1100.110324.050050.電子槍原理.e-gun principle.e-gun原理 -> 285 110324
78 110324050060 110324.050060.上面的電子槍 110324.050060.e-gun evaporation 1100.110324.050060.上面的電子槍.e-gun evaporation.e-gunevaporation -> 374 110324
79 110324050070 110324.050070.飛濺技術的基礎 110324.050070.Basics of sputtering technology 1100.110324.050070.飛濺技術的基礎.Basics of sputtering technology.スパッタ技術の基礎 -> 290 110324
80 110324050080 110324.050080.濺射法ITO膜 110324.050080.ITO film by sputtering method 1100.110324.050080.濺射法ITO膜.ITO film by sputtering method.スパッタリング法によるITO膜 -> 285 110324
81 110324050090 110324.050090.通過濺射和氣相沉積製造薄膜 110324.050090.Thin film production by sputtering and thin film deposition 1100.110324.050090.通過濺射和氣相沉積製造薄膜.Thin film production by sputtering and thin film deposition.スパッタリング 110324
82 110324050100 110324.050100.薄霧CVD法形成鋰離子電池正極膜的機理 110324.050100.Formation mechanism of lithium ion battery positive electrode thin film by mist CVD me 1100.110324.050100.薄霧CVD法形成鋰離子電池正極膜的機理.Formation mechanism of lithium ion battery positive electrode 110324
83 110324050110 110324.050110.通過噴墨法製造的薄膜全固態鋰電池 110324.050110.Thin-film all-solid-state lithium battery manufactured by the inkjet method .. 1100.110324.050110.通過噴墨法製造的薄膜全固態鋰電池.Thin-film all-solid-state lithium battery manufactured by the in 110324
84 110324050120 110324.050120.真空氣相沉積材料 110324.050120.Vacuum-deposited material 1100.110324.050120.真空氣相沉積材料.Vacuum-deposited material.真空蒸着材料  -> 554 110324
85 110324060001 110324.060001.阿爾巴克技術 110324.060001.VLVAC techno 1100.110324.060001.阿爾巴克技術.VLVAC techno.アルバックテクノ -> 523 110324
86 110324060010 110324.060010.有機EL氣相沉積製造設備的最新技術 110324.060010.State-of-the-art technology for organic EL vapor deposition manufacturing equipment 1100.110324.060010.有機EL氣相沉積製造設備的最新技術.State-of-the-art technology for organic EL vapor deposition man 110324
87 110324060020 110324.060020.有機器件的薄膜電極沉積技術研究 110324.060020.Research on thin film electrode deposition technology for organic devices 1100.110324.060020.有機器件的薄膜電極沉積技術研究.Research on thin film electrode deposition technology for organic 110324
88 110324060030 110324.060030.氣相沉積材料|高純度稀有金屬綜合製造商 110324.060030.Thin-film deposition materials | Comprehensive manufacturer of high-purity rare metals 1100.110324.060030.氣相沉積材料|高純度稀有金屬綜合製造商.Thin-film deposition materials | Comprehensive manufacturer o 110324
89 110324060040 110324.060040.氣相沉積材料的開發 110324.060040.Development of thin-film deposition materials 1100.110324.060040.氣相沉積材料的開發.Development of thin-film deposition materials.蒸着材料の開發 -> 319 110324
90 110324060050 110324.060050.氣相沉積設備的消耗零件/稀有金屬有色金屬加工製造商... 110324.060050.Consumable parts for vapor deposition equipment / Rare metal non-ferrous metal process 1100.110324.060050.氣相沉積設備的消耗零件/稀有金屬有色金屬加工製造商....Consumable parts for vapor deposition equipment / Ra 110324
91 110324060060 110324.060060.氣相沉積設備製造商 110324.060060.Thin film deposition equipment manufacturer 1100.110324.060060.氣相沉積設備製造商.Thin film deposition equipment manufacturer.蒸着装置メーカー -> 291 110324
92 110324060070 110324.060070.關於真空蒸鍍設備和真空加熱機構大學和公共機構以 110324.060070.Regarding vacuum vapor deposition equipment and vacuum heating mechanism universities 1100.110324.060070.關於真空蒸鍍設備和真空加熱機構大學和公共機構以.Regarding vacuum vapor deposition equipment and vacuum he 110324
93 110324070001 110324.070001.半導體製造工藝 110324.070001.Semiconductor manufacturing process 1100.110324.070001.半導體製造工藝.Semiconductor manufacturing process.半導体製造工程 -> 1651 110324
94 110324070010 110324.070010.半導體製造設備/真空氣相沉積設備--Semilinks 110324.070010.Semiconductor Manufacturing Equipment / Vacuum Deposition Equipment --Semilinks 1100.110324.070010.半導體製造設備/真空氣相沉積設備--Semilinks.Semiconductor Manufacturing Equipment / Vacuum Deposi 110324
95 110324070020 110324.070020.HeleusEpurioSemiconductor芯片製造工藝採用超高純度材料... 110324.070020.Heraeus Epurio Semiconductor chip manufacturing process using ultra-high purity materi 1100.110324.070020.HeleusEpurioSemiconductor芯片製造工藝採用超高純度材料....Heraeus Epurio Semiconductor chip manu 110324
96 110324070030 110324.070030.原子層控制多元素真空氣相沉積設備EB/電阻加熱複合氣相沉積設備。 110324.070030.Atomic layer control multi-element vacuum deposition equipment EB / resistance heating 1100.110324.070030.原子層控制多元素真空氣相沉積設備EB/電阻加熱複合氣相沉積設備。.Atomic layer control multi-element vacuum deposi 110324
97 110324070040 110324.070040.半導體製造工藝後處理-CKD 110324.070040.Semiconductor manufacturing process post-process --CKD 1100.110324.070040.半導體製造工藝後處理-CKD.Semiconductor manufacturing process post-process --CKD.半導体製造プロセス後処 110324
98 110324070050 110324.070050.半導體製造工藝預處理-CKD 110324.070050.Semiconductor manufacturing process pre-process --CKD 1100.110324.070050.半導體製造工藝預處理-CKD.Semiconductor manufacturing process pre-process --CKD.半導体製造工程前処理-C 110324
99 110324070060 110324.070060.半導體製造中的塗層-基恩士 110324.070060.Coating in semiconductor manufacturing-Keyence 1100.110324.070060.半導體製造中的塗層-基恩士.Coating in semiconductor manufacturing-Keyence.半導体製造におけるコーティング-KEYE 110324
100 110324070070 110324.070070.金屬氣相沉積設備 110324.070070.Metal deposition equipment 1100.110324.070070.金屬氣相沉積設備.Metal deposition equipment.金属蒸着装置 -> 273 110324
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